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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Boland, Jl
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorbercitations
- 2021The 2021 ultrafast spectroscopic probes of condensed matter roadmapcitations
- 2018Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: From nanowires to perovskites
- 2018High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowirescitations
- 2017Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowirescitations
- 2016A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopycitations
Places of action
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article
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires
Abstract
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.