| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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García Núñez, Carlos
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Giant piezoelectric effect induced by porosity in inclined ZnO thin filmscitations
- 2024Optical and structural properties of silicon nitride thin films deposited by plasma enhanced chemical vapor deposition for high reflectance optical mirrors
- 2024Giant Piezoelectric Effect Induced by Porosity in Inclined ZnO Thin Filmscitations
- 2021Glancing angle deposition of nanostructured ZnO films for ultrasonicscitations
- 2019Graphene–graphite polyurethane composite based high‐energy density flexible supercapacitorscitations
- 2018Electronic skin with energy autonomy and distributed neural data processing
- 2018A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxycitations
- 2017Metal-assisted chemical etched Si nanowires for high-performance large area flexible electronics
- 2016Fabrication and characterization of multiband solar cells based on highly mismatched alloys
- 2015Contribution to the Development of Electronic Devices Based on Zn3N2 Thin Films, and ZnO and GaAs Nanowires
- 2013p-type CuO nanowire photodetectors
- 2013Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered filmscitations
- 2013WO3 nanoparticle-functionalized nanowires for NOx sensing
- 2011Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering
Places of action
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article
A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxy
Abstract
The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. Vertically aligned GaAs NWs have been extensively grown by Ga-assisted vapor–liquid–solid (VLS) mechanism on Si(111) substrates, and they have been used as building blocks in photovoltaics, optoelectronics, electronics, and so forth. However, the nucleation of parasitic species such as traces and nanocrystals on the Si substrate surface during the NW growth could affect significantly the controlled nucleation of those NWs, and therefore the resulting performance of NW-based devices. Preventing the nucleation of parasitic species on the Si substrate is a matter of interest, because they could act as traps for gaseous precursors and/or chemical elements during VLS growth, drastically reducing the maximum length of grown NWs, affecting their morphology and structure, and reducing the NW density along the Si substrate surface. This work presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. GaAs NWs are grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates using triethylgallium and tertiarybutylarsine precursors by a two-step-based growth method presented here; this method includes a growth interruption for an oxidation on air between both steps of growth, reducing the nucleation of parasitic crystals on the thicker SiOx capping layer during the second and longer growth step. VLS conditions are preserved overtime, resulting in a stable NW growth rate of around 6 μm/h for growth times up to 1 h. Resulting GaAs NWs have a high aspect ratio of 85 and average radius of 35 nm. We also report on the existence of characteristic reflection high-energy electron diffraction patterns associated with the epitaxial growth of GaAs NWs on Si(111) substrates, which have been analyzed and compared to the morphological characterization of GaAs NWs grown for different times under different conditions.