| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lehmann, Sebastian
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applicationscitations
- 2024Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performancecitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
- 2022Aero-TiO2 Prepared on the Basis of Networks of ZnO Tetrapods
- 2022The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteriescitations
- 2021Current State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials
- 2021Vapor-solid-solid growth dynamics in GaAs nanowirescitations
- 2020Non-resonant Raman scattering of wurtzite GaAs and InP nanowirescitations
- 2018Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistorscitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2018Atomic-resolution spectrum imaging of semiconductor nanowirescitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2017Thermodynamic stability of gold-assisted InAs nanowire growthcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2016Can antimonide-based nanowires form wurtzite crystal structure?citations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
- 2009Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devicescitations
Places of action
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article
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
Abstract
We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.