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| Naji, M. |
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| Taccardi, Nicola |
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| Azevedo, Nuno Monteiro |
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Kovacs, Andras
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Publications (5/5 displayed)
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructurescitations
- 2023Numerical Analysis of the Influence of Fabrication Process Uncertainty on Terahertz Metasurface Qualitycitations
- 2017Influence of microstructures on mechanical properties and tribology behaviors of TiN/TiXAl1 − XN multilayer coatings
- 2017Dislocations in AlGaN: core structure, atom segregation, and optical propertiescitations
- 2011Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
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article
Dislocations in AlGaN: core structure, atom segregation, and optical properties
Abstract
We conducted a comprehensive investigation of dislocations in Al0.46Ga0.54N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the dislocation core have been examined. We report that the core configuration of dislocations in AlGaN is consistent with that of other materials in the III-Nitride system. However, we observed that the dissociation of mixed-type dislocations is impeded by alloying GaN with AlN, which is confirmed by our experimental observation of Ga and Al atom segregation in the tensile and compressive parts of the dislocations, respectively. Investigation of the optical properties of the dislocations shows that the atom segregation at dislocations has no significant effect on the intensity recorded by cathodoluminescence in the vicinity of the dislocations. These results are in contrast with the case of dislocations in In0.09Ga0.91N where segregation of In and Ga atoms also occurs but results in carrier localization limiting non-radiative recombination at the dislocation. This study therefore sheds light on why InGaN-based devices are generally more resilient to dislocations than their AlGaN-based counterparts.