693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lehmann, Sebastian
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applicationscitations
- 2024Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performancecitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
- 2022Aero-TiO2 Prepared on the Basis of Networks of ZnO Tetrapods
- 2022The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteriescitations
- 2021Current State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials
- 2021Vapor-solid-solid growth dynamics in GaAs nanowirescitations
- 2020Non-resonant Raman scattering of wurtzite GaAs and InP nanowirescitations
- 2018Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistorscitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2018Atomic-resolution spectrum imaging of semiconductor nanowirescitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2017Thermodynamic stability of gold-assisted InAs nanowire growthcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2016Can antimonide-based nanowires form wurtzite crystal structure?citations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
- 2009Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devicescitations
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article
Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires
Abstract
We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {1120}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.