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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ooi, Boon Siew
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Topics
Publications (8/8 displayed)
- 2021Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applicationscitations
- 2017Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystalscitations
- 2017Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splittingcitations
- 2016Surface Restructuring of Hybrid Perovskite Crystalscitations
- 2016Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometrycitations
- 2016First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing techniquecitations
- 2016Hybrid perovskites: Approaches towards light-emitting devices
- 2015First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nmcitations
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article
Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting
Abstract
Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of −31 mA/cm at −0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.