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Ameruddin, Amira S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Tuning the crystal structure and optical properties of selective area grown InGaAs nanowirescitations
- 2021Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
- 2020Nanocomposite Assisted Green Synthesis of Polyvinylpyrrolidone-Silver Nanocomposite Using Pandanus atrocarpus Extract for Antiurolithiatic Activity
- 2017Effect on Different Amount of TiO2 P25 powder for Dye-Sensitized Solar Cell application
- 2016Bandgap Energy of Wurtzite InAs Nanowirescitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2014Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD
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article
Bandgap Energy of Wurtzite InAs Nanowires
Abstract
<p>InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.</p>