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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Thompson, Michael
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2023Empowering clean water whilst safeguarding water distribution pipeline integrity: Towards manganese- and iron-free lime hydrate for water treatmentcitations
- 2020Erosion-Corrosion Detection in Carbon Steel Pipe Loops using SRNLs Thickness and Mass Loss Measurement Coupons - 20464
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2016Low leakage-current InAsSb nanowire photodetectors on siliconcitations
- 2011Family of Double-Cubane Mn(4)Ln(2) (Ln = Gd, Tb, Dy, Ho) and Mn4Y2 Complexes: A New Mn4Tb2 Single-Molecule Magnetcitations
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article
Low leakage-current InAsSb nanowire photodetectors on silicon
Abstract
Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.