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Marshall, Andrew Robert Julian
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2019Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Siliconcitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2019Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materialscitations
- 2016Low leakage-current InAsSb nanowire photodetectors on siliconcitations
- 2016Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxycitations
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article
Low leakage-current InAsSb nanowire photodetectors on silicon
Abstract
Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.