| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gruverman, Alexei
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectriccitations
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2024Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric.citations
- 2018Quasi-1D TiS 3 Nanoribbonscitations
- 2017Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming and relaxationcitations
- 2017Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming and relaxationcitations
- 2015Toward Ferroelectric Control of Monolayer MoS2citations
- 2015Nanomechanics of flexoelectric switchingcitations
- 2014Changing molecular band offsets in polymer blends of (P3HT/P(VDF-TrFE)) poly(3-hexylthiophene) and poly(vinylidene fluoride with trifluoroethylene) due to ferroelectric polingcitations
- 2012Understanding the effect of ferroelectric polarization on power conversion efficiency of organic photovoltaic devicescitations
- 2011Direct fabrication of arbitrary-shaped ferroelectric nanostructures on plastic, glass, and silicon substratescitations
Places of action
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article
Toward Ferroelectric Control of Monolayer MoS2
Abstract
<p>The chemical vapor deposition (CVD) of molybdenum disulfide (MoS<sub>2</sub>) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS<sub>2</sub> growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS<sub>2</sub> film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS<sub>2</sub> monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS<sub>2</sub> under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.</p>