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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shur, Vladimir Ya.
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2021Temperature-dependent Raman spectroscopy, domain morphology and photoluminescence studies in lead-free BCZT ceramiccitations
- 2020Fracture strength and fatigue endurance in Gd-doped ceria thermal actuatorscitations
- 2020Piezoelectric Actuation of Graphene-Coated Polar Structurescitations
- 2015Toward Ferroelectric Control of Monolayer MoS2citations
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article
Toward Ferroelectric Control of Monolayer MoS2
Abstract
<p>The chemical vapor deposition (CVD) of molybdenum disulfide (MoS<sub>2</sub>) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS<sub>2</sub> growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS<sub>2</sub> film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS<sub>2</sub> monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS<sub>2</sub> under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.</p>