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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thelander, Kimberly Dick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2008Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.citations
- 2007Directed growth of branched nanowire structures
- 2007Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotreescitations
- 2006Crystal structure of branched epitaxial III-V nanotreescitations
- 2005A new understanding of au-assisted growth of III-V semiconductor nanowirescitations
- 2005Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructurescitations
- 2004Growth of GaP nanotree structures by sequential seeding of 1D nanowirescitations
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article
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
Abstract
We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 +/- 20 degrees C under an H-2 pressure 2 X 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nano-wires, our findings should be applicable far beyond the present materials system.