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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jakka, Suresh Kumar
University of Aveiro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Extensive Investigation on the Effect of Niobium Insertion on the Physical and Biological Properties of 45S5 Bioactive Glass for Dental Implantcitations
- 2023Extensive Investigation on the Effect of Niobium Insertion on the Physical and Biological Properties of 45S5 Bioactive Glass for Dental Implantcitations
- 2022Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivitycitations
- 2021Molybdenum Oxide Thin Films Grown on Flexible ITO-Coated PET Substratescitations
- 2021Temperature-dependent Raman spectroscopy, domain morphology and photoluminescence studies in lead-free BCZT ceramiccitations
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article
Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity
Abstract
<p>Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr<sub>3</sub>perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼10<sup>16</sup>Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.</p>