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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tappura, Kirsi
VTT Technical Research Centre of Finland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2021Electrical Low-Frequency 1/ƒ γ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platformcitations
- 2021Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platformcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Thin-film thermoelectric devices for energy harvesting and material parameter extraction
- 2016Influence of Substrate on Plasmon-Induced Absorption Enhancementscitations
- 2013Surface properties and interaction forces of biopolymer-doped conductive polypyrrole surfaces by atomic force microscopycitations
- 2005Development of self-assembled MIPs
- 2005Self-Assembled Organic Thin Films as Recognition Elements in Chemical Sensors
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article
Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform
Abstract
Low-frequency 1/f γ noise is ubiquitous, even in high-end electronic devices. Recently, it was found that adsorbed O2 molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbate noise, we have investigated low-frequency noise, while the mobility of surface adsorbates is varied by temperature. We measured low-frequency current noise in suspended monolayer graphene Corbino samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of suspended graphene, we could resolve a combination of 1/f γ and Lorentzian noise induced by the presence of Ne. We find that the 1/f γ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of 1/f noise in metallic systems.