| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mrkyvkova, Nada
Slovak Academy of Sciences
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Unraveling Bulk versus Surface Passivation Effects in Highly Efficient p–<i>i</i>–n Perovskite Solar Cells Using Thiophene‐Based Cationscitations
- 2024Deciphering the Formation Process of 2D to 3D Halide Perovskite Thin Films
- 2024A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communicationscitations
- 2024Pizza oven processing of organohalide perovskites (POPOP): a simple, versatile and efficient vapor deposition methodcitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by In Situ X-ray Diffractioncitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffractioncitations
- 2012Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As
Places of action
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article
Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by In Situ X-ray Diffraction
Abstract
<p>We report on the microstructure, morphology, and growth of 5,5′-bis(naphth-2-yl)-2,2′-bithiophene (NaT2) thin films deposited on graphene, characterized by grazing incidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (AFM) measurements. NaT2 is deposited on two types of graphene surfaces: custom-made samples where chemical vapor deposition (CVD)-grown graphene layers are transferred onto a Si/SiO<sub>2</sub> substrate by us and common commercially transferred CVD graphene on Si/SiO<sub>2</sub>. Pristine Si/SiO<sub>2</sub> substrates are used as a reference. The NaT2 crystal structure and orientation depend strongly on the underlying surface, with the molecules predominantly lying down on the graphene surface (face-on orientation) and standing nearly out-of-plane (edge-on orientation) on the Si/SiO<sub>2</sub> reference surface. Post growth GIXRD and AFM measurements reveal that the crystalline structure and grain morphology differ depending on whether there is polymer residue left on the graphene surface. In situ GIXRD measurements show that the thickness dependence of the intensity of the (111) reflection from the crystalline edge-on phase does not intersect zero at the beginning of the deposition process, suggesting that an initial wetting layer, corresponding to 1-2 molecular layers, is formed at the surface-film interface. By contrast, the (111) reflection intensity from the crystalline face-on phase grows at a constant rate as a function of film thickness during the entire deposition.</p>