| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jalkanen, Pasi
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2023Hydrogen isotope exchange experiments in high entropy alloy WMoTaNbVcitations
- 2022Irradiation Damage Independent Deuterium Retention in WMoTaNbVcitations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2020Preparation and In vivo Evaluation of Red Blood Cell Membrane Coated Porous Silicon Nanoparticles Implanted with 155Tbcitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2019Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealingcitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2016Electric and Magnetic Properties of ALD-Grown BiFeO3 Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer depositioncitations
- 2007Critical temperature modification of low dimensional superconductors by spin dopingcitations
Places of action
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article
Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer deposition
Abstract
Nucleation and conformality are important issues, when depositing thin films for demanding applications. In this study, iridium and iridium dioxide (IrO 2 ) films were deposited by atomic layer deposition (ALD), using five different processes. Different reactants, namely, O 2 , air, consecutive O 2 and H 2 (O 2 +H 2 ), and consecutive O 3 and H 2 (O 3 +H 2 ) pulses were used with iridium acetylacetonate [Ir(acac) 3 ] to deposit Ir, while IrO 2 was deposited using Ir(acac) 3 and O 3 . Nucleation was studied using a combination of methods for film thickness and morphology evaluation. In conformality studies, microscopic lateral high-aspect-ratio (LHAR) test structures, specifically designed for accurate and versatile conformality testing of ALD films, were used. The order of nucleation, from the fastest to the slowest, was O 2 +H 2 > air ≈ O 2 > O 3 > O 3 +H 2 , whereas the order of conformality, from the best to the worst, was O 3 +H 2 > O 2 +H 2 > O 2 > O 3 . In the O 3 process, a change in film composition from IrO 2 to metallic Ir was seen inside the LHAR structures. Compared to the previous reports on ALD of platinum-group metals, most of the studied processes showed good to excellent results.