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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ahmad, Shahab
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Strong Photocurrent from Solution‐Processed Ruddlesden–Popper 2D Perovskite–MoS<sub>2</sub> Hybrid Heterojunctionscitations
- 2019Triple-Cation-Based Perovskite Photocathodes with AZO Protective Layer for Hydrogen Production Applications.
- 2018Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutions:Structural and Optoelectronic Propertiescitations
- 2018Carbon nanotube conductive additives for improved electrical and mechanical properties of flexible battery electrodescitations
- 2018Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutionscitations
- 2015Strong Photocurrent from Two-Dimensional Excitons in Solution-Processed Stacked Perovskite Semiconductor Sheets
- 2015Strong Photocurrent from Two-Dimensional Excitons in Solution-Processed Stacked Perovskite Semiconductor Sheetscitations
- 2015Strong photocurrent from 2D excitons in solution-processed stacked perovskite semiconductor sheets
- 2014In situ intercalation dynamics in inorganic-organic layered perovskite thin films.
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article
Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutions
Abstract
<p>Solar cells and optoelectronics based on lead halide perovskites are generating considerable interest but face challenges with the use of toxic lead. In this study, we fabricate and characterize lead-free perovskites based on germanium and tin solid solutions, CH<sub>3</sub>NH<sub>3</sub>Sn<sub>(1-x)</sub>Ge<sub>x</sub>I<sub>3</sub> (0 ≤ x ≤ 1). We show that these perovskite compounds possess band gaps from 1.3 to 2.0 eV, which are suitable for a range of optoelectronic applications, from single junction devices and top cells for tandems to light-emitting layers. Their thermodynamic stability and electronic properties are calculated for all compositions and agree well with our experimental measurements. Our findings demonstrate an attractive family of lead-free perovskite semiconductors with a favorable band-gap range for efficient single-junction solar cells.</p>