| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ouerghi, Abdelkarim
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe 2 –Graphene Heterostructure via Photoemission Electron Microscopycitations
- 2024Stacking order and electronic band structure in MBE-grown trilayer WSe$_2$ filmscitations
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructurecitations
- 2023Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluridecitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2023Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor depositioncitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2020Time Resolved Photoemission to Unveil Electronic Coupling Between Absorbing and Transport Layers in a Quantum Dot Based Solar Cellcitations
- 2017Stacking fault and defects in single domain multilayered hexagonal boron nitridecitations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Direct observation of the band structure in bulk hexagonal boron nitridecitations
- 2017Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystalscitations
- 2017Electronic structure of CdSe-ZnS 2D nanoplateletscitations
- 2016van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Propertiescitations
- 2016Band Alignment and Minigaps in Monolayer MoS 2 ‑Graphene van der Waals Heterostructurescitations
Places of action
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article
Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystals
Abstract
International audience ; Colloidal nanocrystals are an interesting platform for the design of low cost optoelectronic devices especially in the infrared range of wavelengths. Mercury chalcogenides have reached high maturity to address wavelengths above the telecom range (1.5 µm). However, no screening of the surface chemistry influence has been conducted yet. In this paper, we systematically probe the influence of a series of ligands: Cl-, SCN-, 1,2 ethanedithiol, 1,4 benzenedithiol, 1 octanethiol, 1 butanethiol, As2S3 , S2- on the photoconductive properties of HgTe nanocrystal thin films. A high bandwidth, large dynamic transient photocurrent setup is used to determine the photocarrier dynamics. Two regimes are clearly identified. At early stage (few ns) a fast decay of the photocurrent is resulting from recombination and trapping. Then transport enters in a multiple trapping regime where carriers present a continuously decreasing effective value of their mobility. The power law dependence of the conductance can be used to estimate the trap carrier density and determine the value of the Urbach energy (35 to 50 meV). We demonstrate that a proper choice of ligand is necessary for a trade-off between the material performance (µτ product) and the quality of the surface passivation (to keep a low Urbach energy