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Grayson, M.
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article
Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films
Abstract
The cross-plane thermal conductivity of InGaZnO (IGZO) thin films was measured using the 3<i>ω</i> technique from 18 to 300 K. The studied morphologies include amorphous (a-IGZO), semicrystalline (semi-c-IGZO), and<i> c</i>-axis-aligned single-crystal-like IGZO (c-IGZO) grown by pulsed laser deposition (PLD) as well as a-IGZO deposited by sputtering and by solution combustion processing. The atomic structures of the amorphous and crystalline films were simulated with <i>ab initio</i> molecular dynamics. The film quality and texturing information was assessed by X-ray diffraction and grazing incidence wide-angle X-ray scattering. X-ray reflectivity was also conducted to quantify film densities and porosities. All the high-density films exhibit an empirical power-law temperature dependence of the thermal conductivity <i>κ ∼ T</i><sup>0.6</sup> in the specified temperature range. Among the PLD dense films, semi-c-IGZO exhibits the highest thermal conductivity, remarkably exceeding both films with more order (c-IGZO) and with less order (a-IGZO) by a factor of 4. The less dense combustion-synthesized films, on the other hand, exhibited lower thermal conductivity, quantitatively consistent with a porous film using either an effective medium or percolation model. All samples are consistent with the porosity-adapted Cahill-Pohl (p-CP) model of minimum thermal conductivity.