| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kokkonen, Esko
MAX IV Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Stabilization of Cu2O through Site-Selective Formation of a Co1Cu Hybrid Single-Atom Catalystcitations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2018Depth Profiling of the Chemical Composition of Free-Standing Carbon Dots Using X-ray Photoelectron Spectroscopycitations
- 2018Depth profiling of the chemical composition of free-standing carbon dots using X-ray photoelectron spectroscopycitations
Places of action
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article
Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)
Abstract
<p>The atomic layer deposition of HfO<sub>2</sub>on a TiO<sub>2</sub>(101) surface from tetrakis(dimethylamido)hafnium and water is investigated using a combination of in situ vacuum X-ray photoelectron spectroscopy (XPS) and time-resolved ambient pressure XPS. Precursor pressures and surface temperature are tuned as to map the space state of the deposition. In the initial stages of ALD, a reaction mechanism based on dissociative adsorption dominates over a classic ligand exchange mechanism, typically evoked when metal-amido complexes and water are used as the precursors for metal oxide ALD. Surface species, including a dimethyl ammonium ion and an imine, are identified. It is found that they can be formed only if the active role of the TiO<sub>2</sub>(101) surface is taken into consideration. The temperature of the surface enhances the formation of these species based on an insertion reaction of a hydrogen atom, which then assists the formation of more than the expected monolayer of HfO<sub>2</sub>. A HfO<sub>2</sub>overlayer is produced already during the first half-cycle, enabled by a reduction of the TiO<sub>2</sub>support. Dosing water at high pressure allows hydroxyl formation, which marks the transition toward a well-described ligand exchange reaction type. From the experiments performed, we find that the ALD of HfO<sub>2</sub>at room temperature, performed at high pressure, is mainly based on dissociation and that no side reaction occurs. These insights into the ALD reaction mechanism highlight how in situ studies can help understand how deposition parameters affect the growth of HfO<sub>2</sub>and how the ALD model for transition metal oxide formation from amido complexes and water can be extended.</p>