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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Timm, Rainer
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023Low temperature atomic hydrogen annealing of InGaAs MOSFETscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Nanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulatorcitations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2019GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopycitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2018InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer depositioncitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2013Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)citations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
Places of action
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article
Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)
Abstract
<p>The atomic layer deposition of HfO<sub>2</sub>on a TiO<sub>2</sub>(101) surface from tetrakis(dimethylamido)hafnium and water is investigated using a combination of in situ vacuum X-ray photoelectron spectroscopy (XPS) and time-resolved ambient pressure XPS. Precursor pressures and surface temperature are tuned as to map the space state of the deposition. In the initial stages of ALD, a reaction mechanism based on dissociative adsorption dominates over a classic ligand exchange mechanism, typically evoked when metal-amido complexes and water are used as the precursors for metal oxide ALD. Surface species, including a dimethyl ammonium ion and an imine, are identified. It is found that they can be formed only if the active role of the TiO<sub>2</sub>(101) surface is taken into consideration. The temperature of the surface enhances the formation of these species based on an insertion reaction of a hydrogen atom, which then assists the formation of more than the expected monolayer of HfO<sub>2</sub>. A HfO<sub>2</sub>overlayer is produced already during the first half-cycle, enabled by a reduction of the TiO<sub>2</sub>support. Dosing water at high pressure allows hydroxyl formation, which marks the transition toward a well-described ligand exchange reaction type. From the experiments performed, we find that the ALD of HfO<sub>2</sub>at room temperature, performed at high pressure, is mainly based on dissociation and that no side reaction occurs. These insights into the ALD reaction mechanism highlight how in situ studies can help understand how deposition parameters affect the growth of HfO<sub>2</sub>and how the ALD model for transition metal oxide formation from amido complexes and water can be extended.</p>