| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lhuillier, Emmanuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Advancing the Coupling of III-V Quantum Dots to Photonic Structures to Shape Their Emission Diagramcitations
- 2024The Electronic Impact of Light-Induced Degradation in CsPbBr3 Perovskite Nanocrystals at Gold Interfacescitations
- 2024THz scanning near-field microscopy of HgTe nanocrystals
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2022Chiral Helices Formation by Self-Assembled Molecules on Semiconductor Flexible Substratescitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2022Critical role of water on the synthesis and gelling of gamma-In2S3 nanoribbons with giant aspect ratio
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2020A nanoplatelet-based light emitting diode and its use for all-nanocrystal LiFi-like communicationcitations
- 2020Time Resolved Photoemission to Unveil Electronic Coupling Between Absorbing and Transport Layers in a Quantum Dot Based Solar Cellcitations
- 2020Interactions Between Topological Defects and Nanoparticlescitations
- 2020Pushing absorption of perovskite nanocrystals into the infraredcitations
- 2020Pushing absorption of perovskite nanocrystals into the infraredcitations
- 2019Nanophotonic approaches for integrated quantum photonics
- 2019Halide Ligands to Release Strain in Cadmium Chalcogenide Nanoplatelets and Achieve High Brightnesscitations
- 2018Fine structure of excitons and electron–hole exchange energy in polymorphic CsPbBr 3 single nanocrystalscitations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystalscitations
- 2017Electronic structure of CdSe-ZnS 2D nanoplateletscitations
- 2016van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Propertiescitations
- 2016Phototransport in colloidal nanoplatelets arraycitations
- 2011Thermal properties of mid-infrared colloidal quantum dot detectorscitations
Places of action
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article
Time Resolved Photoemission to Unveil Electronic Coupling Between Absorbing and Transport Layers in a Quantum Dot Based Solar Cell
Abstract
Lead sulfide (PbS) colloidal quantum dots-based photodiodes are remarkable structures obtained via colloidal engineering because of their outstanding optoelectronic performances. They combine surface ligand engineering to design a p-n junction with all solution processability. Here we investigate the PbS diode electronic structure combining static and dynamic photoemissions with transport measurements. We show that the n-type nature of the I-capped PbS CQDs shifts the valence band away from the Fermi level compared to the thiol capped nanocrystals. This change in majority carriers can be probed using time resolved X-ray photoemission spectroscopy (TRXPS). We also prove that the photo-induced binding energy shift depends on the nanoparticle surface chemistry. Finally, we demonstrate the ability of TRXPS to selectively probe the electronic structure of each side of an interface. We explore the PbS/MoO3 interface used as hole extractor in the PbS solar cell, using this method. We demonstrate that the PbS layer photosensitizes the MoO3 layer and that the two layers have a quasi-rigid electrostatic coupling. We identify the band bending occurring on the PbS(EDT)/MoO3 to be a limiting factor for the device performance and suggest strategies to overcome this limitation.