| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parish, James
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
Places of action
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article
Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursors
Abstract
<p>A family of 12 zinc(II) thoureide complexes, of the general form [{L}ZnMe], [{L}Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }], and [{L}<sub>2</sub> Zn], have been synthesized by direct reaction of the thiourea pro-ligands<sup>i</sup> PrN(H)CS(NMe<sub>2</sub> ) H[L<sup>1</sup> ], CyN(H)CS(NMe<sub>2</sub> ) H[L<sup>3</sup> ],<sup>t</sup> BuN(H)CS(NMe<sub>2</sub> ) H[L<sup>2</sup> ], and MesN(H)CS(NMe<sub>2</sub> ) H[L<sup>4</sup> ] with either ZnMe<sub>2</sub> (1:1) or Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }<sub>2</sub> (1:1 and 2:1) and characterized by elemental analysis, NMR spectroscopy, and thermogravimetric analysis (TGA). The molecular structures of complexes [{L<sup>1</sup> }ZnMe]<sub>2</sub> (1), [{L<sup>2</sup> }ZnMe]<sub>2</sub> ] (2), [{L<sup>3</sup> }ZnMe]<sub>âž</sub> (3), [{L<sup>4</sup> }ZnMe]<sub>2</sub> ] (4), [{L<sup>1</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> (5), [{L<sup>2</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> (6), [{L<sup>3</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> ] (7), [{L<sup>4</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> ] (8), [{L<sup>1</sup> }<sub>2</sub> Zn]<sub>2</sub> (9), and [{L<sup>4</sup> }<sub>2</sub> Zn]<sub>2</sub> (12) have been unambiguously determined using single crystal X-ray diffraction studies. Thermogravimetric analysis has been used to assess the viability of complexes 1-12 as single source precursors for the formation of ZnS. On the basis of TGA data compound 9 was investigated for its utility as a single source precursor to deposit ZnS films on silica-coated glass and crystalline silicon substrates at 150, 200, 250, and 300 °C using an aerosol assisted chemical vapor deposition (AACVD) method. The resultant films were confirmed to be hexagonal-ZnS by Raman spectroscopy and PXRD, and the surface morphologies were examined by SEM and AFM analysis. Thin films deposited from (9) at 250 and 300 °C were found to be comprised of more densely packed and more highly crystalline ZnS than films deposited at lower temperatures. The electronic properties of the ZnS thin films were deduced by UV-Vis spectroscopy to be very similar and displayed absorption behavior and band gap (E<sub>g</sub> = 3.711-3.772 eV) values between those expected for bulk cubic-ZnS (E<sub>g</sub> = 3.54 eV) and hexagonal-ZnS (E<sub>g</sub> = 3.91 eV).</p>