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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hill, Michael S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Alkali Metal Reduction of Alkali Metal Cationscitations
- 2021Tin(II) Ureide Complexes:Synthesis, Structural Chemistry and Evaluation as SnO precursorscitations
- 2021Tin(II) Ureide Complexescitations
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2018Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Depositioncitations
- 2017Deposition of SnS Thin Films from Sn(II) Thioamidate Precursorscitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me 2 M{tfacnac}] [M = Al, Ga, In; Htfacnac = F 3 CC(OH)CHC(CH 3 )NCH 2 CH 2 OCH 3 ]citations
- 2016Homoleptic zirconium amidatescitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]citations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursorcitations
- 2014Single-source AACVD of composite cobalt-silicon oxide thin filmscitations
- 2014The first crystallographically-characterised Cu(II) xanthatecitations
- 2013Influence of crystallinity and energetics on charge separation in polymer–inorganic nanocomposite films for solar cellscitations
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article
Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursors
Abstract
<p>A family of 12 zinc(II) thoureide complexes, of the general form [{L}ZnMe], [{L}Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }], and [{L}<sub>2</sub> Zn], have been synthesized by direct reaction of the thiourea pro-ligands<sup>i</sup> PrN(H)CS(NMe<sub>2</sub> ) H[L<sup>1</sup> ], CyN(H)CS(NMe<sub>2</sub> ) H[L<sup>3</sup> ],<sup>t</sup> BuN(H)CS(NMe<sub>2</sub> ) H[L<sup>2</sup> ], and MesN(H)CS(NMe<sub>2</sub> ) H[L<sup>4</sup> ] with either ZnMe<sub>2</sub> (1:1) or Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }<sub>2</sub> (1:1 and 2:1) and characterized by elemental analysis, NMR spectroscopy, and thermogravimetric analysis (TGA). The molecular structures of complexes [{L<sup>1</sup> }ZnMe]<sub>2</sub> (1), [{L<sup>2</sup> }ZnMe]<sub>2</sub> ] (2), [{L<sup>3</sup> }ZnMe]<sub>âž</sub> (3), [{L<sup>4</sup> }ZnMe]<sub>2</sub> ] (4), [{L<sup>1</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> (5), [{L<sup>2</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> (6), [{L<sup>3</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> ] (7), [{L<sup>4</sup> }Zn{N(SiMe<sub>3</sub> )<sub>2</sub> }]<sub>2</sub> ] (8), [{L<sup>1</sup> }<sub>2</sub> Zn]<sub>2</sub> (9), and [{L<sup>4</sup> }<sub>2</sub> Zn]<sub>2</sub> (12) have been unambiguously determined using single crystal X-ray diffraction studies. Thermogravimetric analysis has been used to assess the viability of complexes 1-12 as single source precursors for the formation of ZnS. On the basis of TGA data compound 9 was investigated for its utility as a single source precursor to deposit ZnS films on silica-coated glass and crystalline silicon substrates at 150, 200, 250, and 300 °C using an aerosol assisted chemical vapor deposition (AACVD) method. The resultant films were confirmed to be hexagonal-ZnS by Raman spectroscopy and PXRD, and the surface morphologies were examined by SEM and AFM analysis. Thin films deposited from (9) at 250 and 300 °C were found to be comprised of more densely packed and more highly crystalline ZnS than films deposited at lower temperatures. The electronic properties of the ZnS thin films were deduced by UV-Vis spectroscopy to be very similar and displayed absorption behavior and band gap (E<sub>g</sub> = 3.711-3.772 eV) values between those expected for bulk cubic-ZnS (E<sub>g</sub> = 3.54 eV) and hexagonal-ZnS (E<sub>g</sub> = 3.91 eV).</p>