| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Hatanpää, Timo Tapio
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 20243D-printed sensor electric circuits using atomic layer depositioncitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2021Highly conductive and stable Co9S8 thin films by atomic layer depositioncitations
- 2019Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2019Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealingcitations
- 2019Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursorscitations
- 2019Nickel Germanide Thin Films by Atomic Layer Depositioncitations
- 2019Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA)(2)(THF) and H2Ocitations
- 2019Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2018Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Filmscitations
- 2017Thermal Atomic Layer Deposition of Continuous and Highly Conducting Gold Thin Filmscitations
- 2017Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2017Atomic Layer Deposition of Crystalline MoS2 Thin Filmscitations
- 2017Studies on Thermal Atomic Layer Deposition of Silver Thin Filmscitations
- 2016Potential gold(I) precursors evaluated for atomic layer depositioncitations
- 2016Atomic Layer Deposition of Metal Phosphates and Lithium Silicates
- 2016Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layerscitations
- 2014Metal oxide films
- 2012Study of amorphous lithium silicate thin films grown by atomic layer depositioncitations
- 2012Lithium Phosphate Thin Films Grown by Atomic Layer Depositioncitations
- 2011Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperaturescitations
- 2011Atomic Layer Deposition of GeTe
- 2011Crystal structures and thermal properties of some rare earth alkoxides with tertiary alcoholscitations
- 2009Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and seleniumcitations
- 2009Alkylsilyl compounds of selenium and tellurium
- 2007Study of a novel ALD process for depositing MgF2 thin filmscitations
- 2007Radical-enhanced atomic layer deposition of silver thin films using phosphine-adducted silver carboxylatescitations
Places of action
| Organizations | Location | People |
|---|
article
Nickel Germanide Thin Films by Atomic Layer Deposition
Abstract
This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl2(tmpda) (tmpda = N,N,N',N',-tetramethyl-1,3-propanediamine) and tributylgermanium hydride serving as a new, efficient reducing agent. This is the first time ALD NixGey films are prepared directly upon the combination of two precursors and without any annealing treatment. NixGey is an important contact material for enabling Ge-based transistors and thus circumventing the scaling issues related to current microelectronics. The Ni2Ge process was examined at low temperatures of 160-200 degrees C. Self-limiting, saturative growth with a high growth rate of 0.91 angstrom/cycle was observed at 180 degrees C. The films were thoroughly analyzed in terms of morphology, crystallinity, composition, and resistivity. The Ni2Ge films were pure, with the sum of contaminants being less than 1 at. %. Owing to their high purity, the films exhibited low resistivity, suggesting suitability for contact applications. ; Peer reviewed