| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mattinen, Miika Juhana
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Structural Aspects of MoS x Prepared by Atomic Layer Deposition for Hydrogen Evolution Reactioncitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistrycitations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic layer deposition of GdF3thin filmscitations
- 2021Atomic layer deposition of TbF3 thin filmscitations
- 2021Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyondcitations
- 2021Highly conductive and stable Co9S8 thin films by atomic layer depositioncitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2020Controlling Atomic Layer Deposition of 2D Semiconductor SnS(2)by the Choice of Substratecitations
- 2019Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2019Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealingcitations
- 2019Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursorscitations
- 2019Nickel Germanide Thin Films by Atomic Layer Depositioncitations
- 2019Review Articlecitations
- 2019Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Filmscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2019Toward epitaxial ternary oxide multilayer device stacks by atomic layer depositioncitations
- 2018Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Filmscitations
- 2018Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Depositioncitations
- 2018Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealingcitations
- 2018Atomic layer deposition of lanthanum oxide with heteroleptic cyclopentadienyl-amidinate lanthanum precursor - Effect of the oxygen source on the film growth and propertiescitations
- 2018Atomic Layer Deposition of Rhenium Disulfidecitations
- 2018Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Filmscitations
- 2018Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursorscitations
- 2017Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2017Atomic Layer Deposition of Zinc Glutarate Thin Filmscitations
- 2017Atomic Layer Deposition of Crystalline MoS2 Thin Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion.citations
- 2016Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer depositioncitations
Places of action
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article
Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronics
Abstract
<p>Semiconducting two-dimensional (2D) materials are studied intensively because of their promising performance in diverse applications from electronics to energy storage and catalysis. Recently, HfS2 and ZrS2 have emerged as potential rivals for the commonly studied 2D semiconductors such as MoS2 and WSe2, but their use is hindered by the difficulty of producing continuous films. Herein, we report the first atomic layer deposition (ALD) processes for HfS2 and ZrS2 using HfCl4 and ZrCl4 with H2S as the precursors. We demonstrate the deposition of uniform and continuous films on a range of substrates with accurately controlled thicknesses ranging from a few monolayers to tens of nanometers. The use of semiconductor industry-compatible precursors and temperatures (approximately 400 degrees C) enables facile upscaling of the process. The deposited HfS2 and ZrS2 films are crystalline, smooth, and stoichiometric with oxygen as the main impurity. As an important step toward applications of HfS2 and ZrS2, we show that their sensitivity toward oxidation can be overcome by minimizing the impurities in the reactor and by depositing a protective AlxSiyOz layer on the top without a vacuum break. Finally, we demonstrate HfS2 and ZrS2 photodetectors exhibiting good performance and stable operation in ambient conditions. Photoresponsivity comparable to thin films or even single flakes of HfS2 or ZrS2 deposited at much higher temperatures is achieved, although the response speed seems to be limited by photogating, as is common for 2D photodetectors. We expect the first ALD processes for HfS2 and ZrS2 to enable further exploration of these materials for various semiconductor applications.</p>