| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wree, Jan-Lucas
Ruhr University Bochum
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Fe2O3-graphitic carbon nitride nanocomposites analyzed by XPScitations
- 2023Plasma-enhanced atomic layer deposition of molybdenum oxide thin films at low temperatures for hydrogen gas sensingcitations
- 2022Low-temperature ALD process development of 200 mm wafer-scale MoS2 for gas sensing applicationcitations
- 2022Nucleation and growth studies of large-area deposited WS(_2) on flexible substrates
- 2021Raman spectroscopy as an effective tool for characterizing large-area 2D TMDs deposited from the gas phase
- 2021Chemical vapor deposition of cobalt and nickel ferrite thin films
- 2021Chemical Vapor Deposition of Cobalt and Nickel Ferrite Thin Films: Investigation of Structure and Pseudocapacitive Propertiescitations
- 2019Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursors : Process Development, Film Characterization, and Gas Sensing Propertiescitations
- 2018Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursorscitations
Places of action
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article
Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursors
Abstract
<p>Heteroleptic bis(tert-butylimido)bis(N,N'-diisopropylacetamidinato) compounds of molybdenum and tungsten are introduced as precursors for atomic layer deposition of tungsten and molybdenum oxide thin films using ozone as the oxygen source. Both precursors have similar thermal properties but exhibit different growth behaviors. With the molybdenum precursor, high growth rates up to 2 angstrom/cycle at 300 degrees C and extremely uniform films are obtained, although the surface reactions are not completely saturative. The corresponding tungsten precursor enables saturative film growth with a lower growth rate of 0.45 angstrom/cycle at 300 degrees C. Highly pure films of both metal oxides are deposited, and their phase as well as stoichiometry can be tuned by changing the deposition conditions. The WO films the crystallize as gamma-WO3 at 300 degrees C and above, whereas films deposited at lower temperatures are amorphous. Molybdenum oxide can be deposited as either amorphous (= 325 degrees C) films. MoOr films are further characterized by synchrotron photoemission spectroscopy and temperature-dependent resistivity measurements. A suboxide MoOx film deposited at 275 degrees C is demonstrated to serve as an efficient hydrogen gas sensor at a low operating temperature of 120 degrees C.</p>