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Naji, M. |
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Motta, Antonella |
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Ali, M. A. |
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Konstantatos, Gerasimos
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Publications (7/7 displayed)
- 2022Cation disorder engineering yields AgBiS2 nanocrystals with enhanced optical absorption for efficient ultrathin solar cells
- 2020Solid‐State Thin‐Film Broadband Short‐Wave Infrared Light Emitterscitations
- 2020Single-Exciton Gain and Stimulated Emission Across the Infrared Telecom Band from Robust Heavily Doped PbS Colloidal Quantum Dots.citations
- 2020Colloidal AgBiS2 nanocrystals with reduced recombination yield 6.4% power conversion efficiency in solution-processed solar cellscitations
- 2018High-Efficiency Light-Emitting Diodes Based on Formamidinium Lead Bromide Nanocrystals and solution processed transport layerscitations
- 2016Matildite versus schapbachite: First-principles investigation of the origin of photoactivity in AgBiS2citations
- 2015Prospects of Nanoscience with Nanocrystalscitations
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article
High-Efficiency Light-Emitting Diodes Based on Formamidinium Lead Bromide Nanocrystals and solution processed transport layers
Abstract
Perovskite nanocrystal light-emitting diodes (LEDs) employing architecture comprising a ZnO nanoparticles electron-transport layer and a conjugated polymer hole-transport layer have been fabricated. The obtained LEDs demonstrate a maximum external-quantum-efficiency of 6.04%, luminance of 12998 Cd/m2 and stable electroluminescence at 519 nm. Importantly, such high efficiency and bright-ness have been achieved by employing solution processed transport layers, formamidinium lead bromide nanocrystals (CH(NH2)2PbBr3 NCs) synthesized at room-temperature and in air without the use of a Schlenk line, and a procedure based on atomic layer deposition to insolubilize the NC film. The obtained NCs show a photoluminescence quantum yield of 90% that is retained upon film fabrication. The results show that perovskite NC LEDs can achieve high-performance without the use of transport layers deposited through evaporation in ultra-high-vacuum.