| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Mattinen, Miika Juhana
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Structural Aspects of MoS x Prepared by Atomic Layer Deposition for Hydrogen Evolution Reactioncitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistrycitations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic layer deposition of GdF3thin filmscitations
- 2021Atomic layer deposition of TbF3 thin filmscitations
- 2021Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyondcitations
- 2021Highly conductive and stable Co9S8 thin films by atomic layer depositioncitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2020Controlling Atomic Layer Deposition of 2D Semiconductor SnS(2)by the Choice of Substratecitations
- 2019Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2019Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealingcitations
- 2019Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursorscitations
- 2019Nickel Germanide Thin Films by Atomic Layer Depositioncitations
- 2019Review Articlecitations
- 2019Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Filmscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2019Toward epitaxial ternary oxide multilayer device stacks by atomic layer depositioncitations
- 2018Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Filmscitations
- 2018Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Depositioncitations
- 2018Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealingcitations
- 2018Atomic layer deposition of lanthanum oxide with heteroleptic cyclopentadienyl-amidinate lanthanum precursor - Effect of the oxygen source on the film growth and propertiescitations
- 2018Atomic Layer Deposition of Rhenium Disulfidecitations
- 2018Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Filmscitations
- 2018Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursorscitations
- 2017Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2017Atomic Layer Deposition of Zinc Glutarate Thin Filmscitations
- 2017Atomic Layer Deposition of Crystalline MoS2 Thin Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion.citations
- 2016Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer depositioncitations
Places of action
| Organizations | Location | People |
|---|
article
Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films
Abstract
In this paper, we introduce a new Co precursor for the atomic layer deposition (ALD) of Co metal and other Co containing materials. CoCl2(TMEDA) (TMEDA = N,N,N ',N '-tetramethylethylenediamine) is a diamine adduct of cobalt(II) chloride that is inexpensive and easy to synthesize, making it an industrially viable precursor. Furthermore, CoCl2(TMEDA) shows good volatility at reasonably low temperatures and is thermally stable up to a temperature of, similar to 300 degrees C. We also present a full ALD study for the deposition of CoO thin films using CoCl2(TMEDA) and water as precursors. The process was investigated within a temperature range of 225-300 degrees C. Saturation of the film growth with respect to both precursor pulse lengths was verified. According to X-ray diffraction, the films were a mixture of hexagonal and cubic CoO. No reflections corresponding to Co3O4 were detected. The hexagonal phase is characteristic to nanomaterials only and is not seen in bulk CoO. The crystal structure of the films could be tuned by temperature, water pulse lengths, and type of substrate material. The films deposited at 275 degrees C exhibited 1:1 Co:O stoichiometry and very high purity. The CoO films could be reduced to Co metal at an exceptionally low temperature of 250 degrees C in 10% forming gas. Continuity of the reduced Co films was improved when the CoO film was deposited on TiN instead of native oxide terminated Si. The Co content of a 50 nm reduced metal film was as high as 95 at. %, with negligible amounts of oxygen and hydrogen. ; Peer reviewed