| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dendooven, Jolien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (34/34 displayed)
- 2024Atomic layer deposition for tuning the surface chemical composition of nickel iron phosphates for oxygen evolution reaction in alkaline electrolyzerscitations
- 2024Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin filmscitations
- 2023Atomic layer deposition of yttrium oxide as a protective coating for lithium metal anodes
- 2023Crystalline tin disulfide by low-temperature plasma-enhanced 2 atomic layer deposition as an electrode material for Li-ion batteries 3 and CO2 electroreductioncitations
- 2023Low temperature area selective atomic layer deposition of ruthenium dioxide thin films using polymers as inhibition layerscitations
- 2023Low temperature area selective atomic layer deposition of ruthenium dioxide thin films using polymers as inhibition layerscitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2022Titanium carboxylate molecular layer deposited hybrid films as protective coatings for lithium-ion batteriescitations
- 2022Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactantcitations
- 2022Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Propertiescitations
- 2022Shuffling atomic layer deposition gas sequences to modulate bimetallic thin films and nanoparticle propertiescitations
- 2022Atomic layer deposition of ruthenium dioxide based on redox reactions between alcohols and ruthenium tetroxidecitations
- 2022Atomic layer deposition of metal phosphatescitations
- 2022Plasma-enhanced atomic layer deposition of nickel and cobalt phosphate for lithium ion batteriescitations
- 2021Influence of Alumina Addition on the Optical Properties and the Thermal Stability of Titania Thin Films and Inverse Opals Produced by Atomic Layer Deposition
- 2021In situ study of noble metal atomic layer deposition processes using grazing incidence small angle X-ray scattering
- 2021In situ XAS/SAXS study of Al2O3-coated PtGa catalysts for propane dehydrogenationcitations
- 2021Covalent graphite modification by low-temperature photocatalytic oxidation using a titanium dioxide thin film prepared by atomic layer depositioncitations
- 2020Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettabilitycitations
- 2018Kinetics of Lifetime Changes in Bimetallic Nanocatalysts Revealed by Quick X-ray Absorption Spectroscopycitations
- 2018Voltage-controlled ON−OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2018Voltage-controlled ON-OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2017Plasma-enhanced atomic layer deposition of silver using Ag(fod)(<tex>$PEt_{3}$</tex>) and <tex>$NH_{3}$</tex>-plasmacitations
- 2017Size- and composition-controlled Pt–Sn bimetallic nanoparticles prepared by atomic layer depositioncitations
- 2016Atomic layer deposition route to tailor nanoalloys of noble and non-noble metalscitations
- 2016Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlatticescitations
- 2016Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlatticescitations
- 2016Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealingcitations
- 2015Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitrycitations
- 2014Synchrotron based in situ characterization during atomic layer deposition
- 2012In Situ Monitoring of Atomic Layer Deposition in Nanoporous Thin Films Using Ellipsometric Porosimetrycitations
- 2011Tailoring nanoporous materials by atomic layer depositioncitations
- 2011Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabscitations
Places of action
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article
Plasma-enhanced atomic layer deposition of silver using Ag(fod)(<tex>$PEt_{3}$</tex>) and <tex>$NH_{3}$</tex>-plasma
Abstract
A plasma-enhanced atomic layer deposition (ALD) process using the Ag(fod)(PEt3) precursor [(triethylphosphine)(6,6,7,7,8,8,8-heptafluoro-2,2-dimethy1-3,5-octanedionate)silver(I)] in combination with NH3-plasma is reported. The steady growth rate of the reported process (0.24 +/- 0.03 nm/cycle) was found to be 6 times larger than that of the previously reported Ag ALD process based on the same precursor in combination with H-2-plasma (0.04 +/- 0.02 nm/cycle). The ALD characteristics of the H-2-plasma and NH3-plasma processes were verified. The deposited Ag films were polycrystalline face-centered cubic Ag for both processes. The film morphology was investigated by ex situ scanning electron microscopy and grazing-incidence small-angle X-ray scattering, and it was found that films grown with the NH3-plasma process exhibit a much higher particle areal density and smaller particle sizes on oxide substrates compared to those deposited using the H-2-plasma process. This control over morphology of the deposited Ag is important for applications in catalysis and plasmonics. While films grown with the H-2-plasma process had oxygen impurities (similar to 9 atom %) in the bulk, the main impurity for the NH3-plasma process was nitrogen (similar to 7 atom %). In situ Fourier transform infrared spectroscopy experiments suggest that these nitrogen impurities are derived from NH surface groups generated during the NH3-plasma, which interact with the precursor molecules during the precursor pulse. We propose that the reaction of these surface groups with the precursor leads to additional deposition of Ag atoms during the precursor pulse compared to the H-2-plasma process, which explains the enhanced growth rate of the NH3-plasma process.