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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Adelmann, Christoph
IMEC
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Al3Sc thin films for advanced interconnect applicationscitations
- 2022Properties of ultrathin molybdenum films for interconnect applicationscitations
- 2020Temperature-dependent resistivity of alternative metal thin filmscitations
- 2020Introduction to spin wave computingcitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2017Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl)(1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Propertiescitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2013Roughness evolution during the atomic layer deposition of metal oxidescitations
- 2010Properties of Ultrathin High Permittivity (Nb1-xTax)(2)O-5 Films Prepared by Aqueous Chemical Solution Depositioncitations
- 2009Thermally stable high effective work function TaCN thin films for metal gate electrode applications
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article
Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl)(1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties
Abstract
The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm.