| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zakutayev, Andriy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Is Cu3-xP a Semiconductor, a Metal, or a Semimetal?citations
- 2023Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emissioncitations
- 2023Is Cu 3-x P a Semiconductor, a Metal, or a Semimetal?citations
- 2022Crystallize It before It diffusescitations
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films
- 2022Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films.
- 2020Templated growth of metastable polymorphs on amorphous substrates with seed layerscitations
- 2020Wurtzite materials in alloys of rock salt compoundscitations
- 2019Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin filmscitations
- 2018The 2019 materials by design roadmapcitations
- 2018Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substratescitations
- 2018Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)Ncitations
- 2018Combinatorial Nitrogen Gradients in Sputtered Thin Filmscitations
- 2018Negative-pressure polymorphs made by heterostructural alloyingcitations
- 2018Characterization of Elastic Modulus Across the (Al 1– x Sc x )N System Using DFT and Substrate-Effect-Corrected Nanoindentationcitations
- 2017Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn1−xCaxSecitations
- 2017Novel phase diagram behavior and materials design in heterostructural semiconductor alloyscitations
- 2017Novel phase diagram behavior and materials design in heterostructural semiconductor alloyscitations
- 2017Monte Carlo simulations of disorder in <math><mrow><mi>ZnSn</mi><msub><mi mathvariant='normal'>N</mi><mn>2</mn></msub></mrow></math> and the effects on the electronic structurecitations
- 2017Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1- x Ca x Secitations
- 2017Design of metastable tin titanium nitride semiconductor alloyscitations
- 2016A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]citations
- 2016Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structurescitations
- 2016Synthesis and characterization of (Sn,Zn)O alloyscitations
- 2015Design of Semiconducting Tetrahedral <math display="inline"> <mrow> <msub> <mrow> <mi>Mn</mi> </mrow> <mrow> <mn>1</mn> <mo>₋</mo> <mi>x</mi> </mrow> </msub> <msub> <mrow> <mi>Zn</mi> </mrow> <mrow> <mi>x</mi> </mrow> </msub> <mi mathvariant="normal">O</mi> </mrow> </math> Alloys and Their Application to Solar Water Splittingcitations
- 2012Surface Origin of High Conductivities in Undoped In2O3 Thin Filmscitations
Places of action
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article
Synthesis and characterization of (Sn,Zn)O alloys
Abstract
SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn<sup>0</sup> via Sn<sup>2+</sup> to Sn<sup>4+</sup>, which can be counteracted by reducing the oxygen partial pressure during the deposition. The optical characterization of the smooth <10 at. % Sn<sub>1-x</sub>Zn<sub>x</sub>O thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.