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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Whelan, Patrick Rebsdorf
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopycitations
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2021Nonlinear conductivity response of graphene on thin polymeric film detected by reflection-mode air-plasma THz-TDS
- 2020Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopycitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2018Conductivity mapping of graphene on polymeric films by terahertz time-domain spectroscopycitations
- 2018Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphene:Papercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphenecitations
- 2016Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphenecitations
- 2016Transfer and characterization of large-area CVD graphene for transparent electrode applications
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article
Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene
Abstract
We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of 0<sub>2</sub> during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene's use in electronic and passivation applications.