| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Peter, Laurence M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2015Characterization of Planar Lead Halide Perovskite Solar Cells by Impedance Spectroscopy, Open-Circuit Photovoltage Decay, and Intensity-Modulated Photovoltage/Photocurrent Spectroscopycitations
- 2015Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursorcitations
- 2014Tin doping speeds up hole transfer during light-driven water oxidation at hematite photoanodescitations
- 2013Realisation of regularly faceted three-dimensional metallic mesocrystals by electrodeposition
- 2012In situ detection of free and trapped electrons in dye-sensitized solar cells by photo-induced microwave reflectance measurementscitations
- 2012Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin filmscitations
- 2011Thermochemical and kinetic aspects of the sulfurization of Cu–Sb and Cu–Bi thin filmscitations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2009Towards sustainable photovoltaics: studies of new absorber materials
- 2009Cu-Sb-S: one-step electrochemical deposition of thin films for photovoltaic applications
Places of action
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article
Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor
Abstract
Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) Sulfide, is one such materi-al which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g. SnO2) oxides and higher tin sulfides (e.g. Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which relies heavily on having precursors that are volatile, stable and reac-tive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), Dimethylamido-(N-Phenyl-N’,N’-Dimethyl-Thiouriate)Sn(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor (1) is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, FTO, Si and glass substrates at the optimized deposition temperatures of 375 oC and 300 oC, respectively. The densely packed poly-crystalline thin films have been characterized by XRD, SEM, AFM, Raman spectroscopy, EDS and XPS analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films show distinctly dif-ferent optical properties with direct band gaps of 1.34 eV and 1.78 eV, respectively. Furthermore photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.