| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Johnson, Andrew L.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (40/40 displayed)
- 2024Zinc and cadmium thioamidate complexes:rational design of single-source precursors for the AACVD of ZnScitations
- 2024Plasma-Enhanced Atomic Layer Deposition of Hematite for Photoelectrochemical Water Splitting Applications
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2022N-O Ligand Supported Stannylenescitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexes:Synthesis, Structural Chemistry and Evaluation as SnO precursorscitations
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2019Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cellscitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Oxidative Addition to Sn(II) Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystalscitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2018Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Depositioncitations
- 2017Deposition of SnS Thin Films from Sn(II) Thioamidate Precursorscitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me 2 M{tfacnac}] [M = Al, Ga, In; Htfacnac = F 3 CC(OH)CHC(CH 3 )NCH 2 CH 2 OCH 3 ]citations
- 2016Cobalt(I) olefin complexes:precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin filmscitations
- 2016Homoleptic zirconium amidatescitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]citations
- 2015Tailoring precursors for depositioncitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursorcitations
- 2014Single-source AACVD of composite cobalt-silicon oxide thin filmscitations
- 2014The first crystallographically-characterised Cu(II) xanthatecitations
- 2013Synthesis of heterobimetallic tungsten acetylacetonate/alkoxide complexes and their application as molecular precursors to metal tungstatescitations
- 2013Development of metal chalcogenide precursors for use in chemical vapour deposition (CVD) and colloidal nano particle synthesis
- 2013CVD of pure copper films from novel iso-ureate complexescitations
- 2013Inorganic and organozinc fluorocarboxylatescitations
- 2012Photoactivated linkage isomerism in single crystals of nickel, palladium and platinum di-nitro complexes: A photocrystallographic investigationcitations
- 2011Synthesis of complexes with the polydentate ligand N,N '-bis(2-hydroxyphenyl)-pyridine-2,6-dicarboxamidecitations
- 2011Synthesis, characterization, and materials chemistry of group 4 silylimidescitations
- 2009Structural Tungsten-Imido Chemistry: The Gas-Phase Structure of W(NBut)(2)(NHBut)(2) and the Solid-State Structures of Novel Heterobimetallic W/N/M (M = Rh, Pd, Zn) Speciescitations
- 2009Synthesis and structure of aluminium amine-phenolate complexescitations
- 2001Tungsten(VI) metallacarborane imido complexes; hydrogen bonding to a bent imido ligand in {W(Nt(Bu)2[N(H)C(Me)NHtBu](C2 B9H11}
- 2000First structural characterisation of a 2,1,12-MC2B9 metallacarborane, [2,2,2-(NMe2)3-closo-2,1,12-TaC2B 9H11]. Trends in boron NMR shifts on replacing a {BH} vertex with a metal {MLn} vertex in icosahedral carboranescitations
Places of action
| Organizations | Location | People |
|---|
article
Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor
Abstract
Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) Sulfide, is one such materi-al which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g. SnO2) oxides and higher tin sulfides (e.g. Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which relies heavily on having precursors that are volatile, stable and reac-tive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), Dimethylamido-(N-Phenyl-N’,N’-Dimethyl-Thiouriate)Sn(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor (1) is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, FTO, Si and glass substrates at the optimized deposition temperatures of 375 oC and 300 oC, respectively. The densely packed poly-crystalline thin films have been characterized by XRD, SEM, AFM, Raman spectroscopy, EDS and XPS analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films show distinctly dif-ferent optical properties with direct band gaps of 1.34 eV and 1.78 eV, respectively. Furthermore photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.