| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Popov, Georgi
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2016Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion.citations
Places of action
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article
Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3
Abstract
Halide perovskites, such as CsSnI3, are materials renowned for their exceptional optoelectronic properties. CsSnI3 stands out as a desirable choice for nontoxic and environmentally friendly absorber layers in perovskite solar cells (PSC) due to the absence of lead in its composition. However, the limited ability to deposit conformal and scalable halide perovskite thin films remains a significant obstacle to the wide commercialization of PSCs. In this study, we use atomic layer deposition (ALD) to tackle this obstacle. We present two new ALD processes: SnI2 and CsSnI3. The SnI2 process operates at low temperatures within a narrow range (75-100 C-degrees) and has a growth per cycle (GPC) of 0.9 angstrom. By depositing ALD CsI and subsequently ALD SnI2 at different temperatures, we successfully obtain phase-pure gamma-CsSnI3 films via a conversion reaction. Moreover, we demonstrate an alternative method for gamma-CsSnI(3 )film deposition by replacing the ALD SnI2 with a pulsed chemical vapor deposition (pulsed CVD) SnI2 step. This pulsed CVD SnI2 step operates at temperatures compatible with the ALD CsI process, effectively making it a one-step process (effective GPC > 2.0 angstrom) compared to the ALD conversion while retaining its conformality characteristics.