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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rinke, Patrick
in Cooperation with on an Cooperation-Score of 37%
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Publications (8/8 displayed)
- 2023Updates to the DScribe library : New descriptors and derivativescitations
- 2023Screening Mixed-Metal Sn2M(III)Ch2X3 Chalcohalides for Photovoltaic Applicationscitations
- 2022Compositional engineering of perovskites with machine learningcitations
- 2022Compositional engineering of perovskites with machine learningcitations
- 2016Multiscale approach to the electronic structure of doped semiconductor surfacescitations
- 2016Density functional theory study of the α-γ phase transition in cerium: Role of electron correlation and f -orbital localizationcitations
- 2015Multiscale approach to the electronic structure of doped semiconductor surfacescitations
- 2015Evidence for photogenerated intermediate hole polarons in ZnOcitations
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article
Screening Mixed-Metal Sn2M(III)Ch2X3 Chalcohalides for Photovoltaic Applications
Abstract
Quaternary mixed-metal chalcohalides (Sn2M(III)Ch2X3) are emerging as promising lead-free, perovskite-inspired photovoltaic absorbers. Motivated by recent developments of a first Sn2SbS2I3-based device, we used density functional theory to identify lead-free Sn2M(III)Ch2X3 materials that are structurally and energetically stable within Cmcm, Cmc21, and P21/c space groups and have a band gap in the range of 0.7-2.0 eV to cover outdoor and indoor photovoltaic applications. A total of 27 Sn2M(III)Ch2X3 materials were studied, including Sb, Bi, and In for the M(III)-site, S, Se, and Te for the Ch-site, and Cl, Br, and I for the X-site. We identified 12 materials with a direct band gap that meet our requirements, namely, Sn2InS2Br3, Sn2InS2I3, Sn2InSe2Cl3, Sn2InSe2Br3, Sn2InTe2Br3, Sn2InTe2Cl3, Sn2SbS2I3, Sn2SbSe2Cl3, Sn2SbSe2I3, Sn2SbTe2Cl3, Sn2BiS2I3, and Sn2BiTe2Cl3. A database scan reveals that 9 of 12 are new compositions. For all 27 materials, P21/c is the thermodynamically preferred structure, followed by Cmc21. In Cmcm and Cmc21, mainly direct gaps occur, whereas indirect gaps occur in P21/c. To open up the possibility of band gap tuning in the future, we identified 12 promising Sn2M(III)1-aM(III)′aCh2-bCh′bX3-cX′c alloys, which fulfill our requirements, and an additional 69 materials by combining direct and indirect band gap compounds. ; Peer reviewed