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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ortí, Enrique
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Publications (3/3 displayed)
- 2024Growth mechanism of oleylammonium-based tin and lead bromide perovskite nanostructurescitations
- 2023Chalcohalide Antiperovskite Thin Films with Visible Light Absorption and High Charge-Carrier Mobility Processed by Solvent-Free and Low-Temperature Methodscitations
- 2022Through-space hopping transport in an iodinedoped perylene-based metal–organic frameworkcitations
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article
Chalcohalide Antiperovskite Thin Films with Visible Light Absorption and High Charge-Carrier Mobility Processed by Solvent-Free and Low-Temperature Methods
Abstract
<p>Silver chalcohalide antiperovskites represent a rather unexplored alternative to lead halide perovskites and other semiconductors based on toxic heavy metals. All synthetic approaches reported so far for Ag<sub>3</sub>SI and Ag<sub>3</sub>SBr require long synthesis times (typically days, weeks, or even months) and high temperatures. Herein, we report the synthesis of these materials using a fast and low-temperature method involving mechanochemistry. Structural and optical properties are examined experimentally and supported by first-principles calculations. Furthermore, we deposit Ag<sub>3</sub>SI as thin films by pulsed laser deposition and characterize its optoelectronic properties using optical-pump-terahertz-probe measurements, revealing a high charge-carrier mobility of 49 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. This work paves the way to the implementation of chalcohalide antiperovskites in various optoelectronic applications.</p>