| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Popov, Georgi
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2016Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion.citations
Places of action
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article
Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decomposition
Abstract
Area-selective etching(ASE) of polymers is a new, inventive, andsimple self-aligned patterning technique which has the potential tobecome an important method for the fabrication of semiconductor devices.A polymer film is etched by using etchant gases, which diffuse throughthe polymer and are activated by catalytic materials underneath thepolymer. The polymer is decomposed locally on top of catalyticallyactive materials, while on top of catalytically inactive materials,the polymer stays intact. This makes the process area-selective andself-aligned, which avoids edge placement errors and other defects.The patterned polymer can be exploited in subsequent area-selectivedeposition or lift-off processes. In this paper, we study ASE of poly(methylmethacrylate) (PMMA) by using Pt, CeO2, Ti, and Cu as catalyticmaterials in an O-2, H-2, or inert atmosphere.Native SiO2 and Al2O3 were used asnon-catalytic surfaces. The catalytic decomposition of PMMA on Ptand CeO2 in the air was clean; i.e., no intermediates inthe middle of the process or any residue after the process were foundon the surface. It was also demonstrated that very small amounts ofPt or CeO2, even down to a fraction of a monolayer, wereenough to show the catalytic effect. Ti showed a clear catalytic effectin the H-2 and inert atmospheres. Copper oxide, rather thanmetallic copper, was found to promote the decomposition of PMMA inthe H-2 and inert atmospheres. Finally, the feasibilityof the overall patterning process was demonstrated on a 100 nanometerscale by ASE of PMMA followed by atomic layer deposition of Ni usingPt as the catalytic surface and native SiO2 as the non-catalyticsurface.