| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Popov, Georgi
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2024Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decompositioncitations
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2023Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3citations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2021Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursorscitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2016Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion.citations
Places of action
| Organizations | Location | People |
|---|
article
Atomic Layer Deposition of CsI and CsPbI3
Abstract
Cesium iodide (CsI) is a well-established scintillator material that also serves as a precursor for all-inorganic halide perovskite solar absorbers, such as CsPbI3. However, the lack of conformal and scalable methods to deposit halide perovskite thin films remains a major challenge on their way to commercialization. In this work, we employ atomic layer deposition (ALD) as the key method due to its inherent scalability to large areas and complex-shaped surfaces. We demonstrate two new ALD processes for the deposition of CsI and CsPbI3 thin films. The CsI process relies on cesium bis(trimethylsilyl) amide (Cs(btsa)) and tin(IV) iodide (SnI4) as precursors and yields high-purity, uniform, and phase-pure thin films. This process works in a wide temperature range (140-350 degrees C) and exhibits a large growth per cycle value (GPC) of 3.3 angstrom (85% of a CsI monolayer). Furthermore, we convert CsI into CsPbI3 perovskite by exposing a CsI film to our earlier PbI2 ALD process. We demonstrate the deposition of phase-pure gamma- or delta-CsPbI3 perovskite thin films, depending on the applied deposition temperature and number of PbI2 cycles. We believe that the ALD-based approach described in this work will offer a viable alternative for depositing perovskite thin films in applications that involve complex high aspect ratio structures or large substrate areas. ; Peer reviewed