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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kaipio, Mikko Ari Ilmari
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2021Constructing Spacecraft Components Using Additive Manufacturing and Atomic Layer Depositioncitations
- 2020In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin filmscitations
- 2019Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA)(2)(THF) and H2Ocitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2016Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Filmscitations
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article
In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin films
Abstract
In this work, a growth mechanism of an intermetallic Co3Sn2 thin film is studied in situ with a quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). The film is deposited by atomic layer deposition (ALD) from CoCl2 (TMEDA) and Bu3SnH precursors (TMEDA = N,N,N' ,N' - tetramethylethylenediamine). Balanced reaction equations are resolved by fitting the QMS and QCM data, and a step-by-step growth mechanism is determined for the process. During the CoCl2 (TMEDA) pulse, only 1-chlorobutane is formed as a byproduct. However, during the Bu3SnH pulse, two byproducts, BuCl and Bu3SnCl, were clearly detected, indicating that two competing reaction pathways exist during that pulse. Preliminary studies on another intermetallic ALD process, Ni3Sn2, revealed that the reactions occur similarly as in the Co3Sn2 process.