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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Miglio, Leo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 20242H-Si/Ge for Group-IV Photonics:on the Origin of Extended Defects in Core-Shell Nanowirescitations
- 20242H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowirescitations
- 2021Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulationscitations
- 2021Unveiling Planar Defects in Hexagonal Group IV Materials
- 2021Unveiling Planar Defects in Hexagonal Group IV Materialscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentialscitations
- 2019X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) waferscitations
- 2019Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulationscitations
- 2018Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowirescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2013Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowirescitations
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article
Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substrates
Abstract
We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures.