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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Borg, Mattias
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growthcitations
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2019Integration of InSb on Si by Rapid Melt Growth
- 2017High-mobility GaSb nanostructures cointegrated with InAs on Sicitations
- 2017Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxycitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal qualitycitations
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article
Length Distributions of Nanowires Growing by Surface Diffusion
Abstract
<p>We present experimental data on the time and radius-dependent length distributions of Au-catalyzed InAs nanowires grown by metal organic vapor phase epitaxy. We show that these distributions are not as sharp as commonly believed. Rather, they appear to be much broader than Poissonian from the very beginning and spread quickly as the nanowires grow. We develop a model that attributes the observed broadening to the diffusion-induced character of growth. In the initial growth stage, the nanowires are fed from their entire length, leading to a Polya-like length distribution whose standard deviation is proportional to the mean length. After the nanowire length exceeds the adatom diffusion length, the growth acquires a Poissonian character in which the standard deviation scales as a square root of the mean length. We explain why wider nanowires have smaller length dispersion and speculate on the length distributions in Au-catalyzed versus self-catalyzed growth methods.</p>