| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Momand, Jamo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2021Polytriphenylamine composites for energy storage electrodes:Effect of pendant vs. backbone polymer architecture of the electroactive groupcitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Controlling phase separation in thermoelectric Pb1-xGexTe to minimize thermal conductivitycitations
- 2021Polytriphenylamine composites for energy storage electrodescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Differences in Sb2Te3 growth by pulsed laser and sputter depositioncitations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2019Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodotscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applicationscitations
- 2019Low temperature epitaxy of tungsten-telluride heterostructure filmscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applications:Progress and Prospectscitations
- 2018Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivationcitations
- 2017Formation of resonant bonding during growth of ultrathin GeTe filmscitations
- 2016Crystallization Kinetics of Supercooled Liquid Ge-Sb Based on Ultrafast Calorimetrycitations
- 2016Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin filmscitations
- 2014Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetrycitations
Places of action
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article
Crystallization Kinetics of Supercooled Liquid Ge-Sb Based on Ultrafast Calorimetry
Abstract
The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-change memory technology, and their study is also of interest to advance the understanding of crystallization in general. Research on crystallization of PCMs remains challenging because of the short (nanosecond) time and small (nanometer) length scales involved. Ultrafast differential scanning calorimetry (DSC) offers a powerful tool to study crystallization via ultrahigh heating rates. Here, we used this tool to study the crystallization kinetics of growth-dominant Ge7Sb93. Two models describing the viscosity of the undercooled liquid were used to interpret the data and were subsequently crosschecked by independent growth-rate data. With both models the data in Kissinger plots could be fitted well, but one of the models resulted in a large discrepancy with the independent data. These results demonstrate that great care is needed when deriving crystal-growth rates from ultrafast DSC measurements because orders of magnitude errors can be made. The present analysis showed a slightly non-Arrhenius crystallization behavior for the Ge7Sb93 alloy, corresponding to a fragility of 65 and a glass transition temperature of 379 K. The overall viscosity and growth rate of this alloy between the glass and melting temperatures have been revealed, as well as a maximum growth rate of 21 m s(-1) at similar to 800 K. Models based on ultrafast DSC data offer interpretation of crystallization kinetics of PCMs and thereby strongly support the design of PCMs for memory applications.