| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Hähnlein, Bernd
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Publications (3/3 displayed)
- 2023Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiCcitations
- 2022Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Depositioncitations
- 2020Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applicationscitations
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article
Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Deposition
Abstract
A method to synthesize the three-dimensional arrangement of bulk tetrahedral MoS2 thin films by solid source chemical vapor deposition of MoO3 and S is presented. The developed synthesizing recipe uses temperature ramping with a constant N2 gas flow in the deposition process to grow tetrahedral MoS2 thin film layers. The study analyses the time-dependent growth morphologies, and the results are combined and presented in a growth model. A combination of optical, electron and atomic force microscopy, Raman spectroscopy, and X-ray diffraction are used to study the morphological and structural features of the tetrahedral MoS2 thin layers. The grown MoS2 is c-axis oriented 2H-MoS2. Additionally, the synthesized material is further used to fabricate back-gated field-effect transistors (FETs). The fabricated FET devices on the tetrahedral MoS2 show on/off current ratios of 106 and mobility up to ∼56 cm2 V–1 s–1 with an estimated carrier concentration of 4 × 1016 cm–3 for VGS = 0 V.