| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Singh, Deobrat
KTH Royal Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022First-principles calculations to investigate electronic structure and optical properties of 2D MgCl2 monolayercitations
- 2022Stability of and conduction in single-walled Si2BN nanotubescitations
- 2022Two-Dimensional Perovskite/HfS2 van der Waals Heterostructure as an Absorber Material for Photovoltaic Applicationscitations
- 2022Probing the electronic, optical and transport properties of halide double perovskites Rb2InSb(Cl,Br)6 for solar cells and thermoelectric applicationscitations
- 20222D Janus and non-Janus diamanes with an in-plane negative Poisson's ratio for energy applicationscitations
- 2021Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Depositioncitations
- 2021Hydrogenation and oxidation enhances the thermoelectric performance of Si2BN monolayercitations
- 2020Rational Design of 2D h-BAs Monolayer as Advanced Sulfur Host for High Energy Density Li-S Batteriescitations
- 2020Rational Design of 2D h-BAs Monolayer as Advanced Sulfur Host for High Energy Density Li-S Batteriescitations
- 2019The influence of edge structure on the optoelectronic properties of Si2BN quantum dotcitations
- 2019The influence of edge structure on the optoelectronic properties of Si2BN quantum dotcitations
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article
Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Deposition
Abstract
With an aim to enhance the stability and volatility of the heterometallic derivative [SnCl4(µ-OEt)2Ti(OEt)2(HOEt)2] (A), obtained conveniently and quantitatively as a simple adduct formula from the equivalent reaction of commercially available SnCl4 and Ti(OEt)4 in toluene/ethanol, its modification with 2,2,6,6-heptane-3,5-dione (thdH) is reported. The modified precursor [SnCl4(µ-OEt)2Ti(thd)(OEt)(HOEt)] (1), obtained from equimolar reaction of A and thdH, is stable at room temperature but rearranges on heating into A and [SnCl4(µ-OEt)2Ti(thd)2] (2), as confirmed by the vapor pressure measurements and DFT calculations. The heterometallic 2 can be obtained in excellent yield from the reaction of A and thdH in 1:2 molar ratio and is stable in solid and solution phase up to 200 °C. However, the asymmetric nature of its structure consisting of fragments of titanium β-diketonate and tin chloride connected by bridging ethoxo groups, leads to breakdown into two homometallic components in gas phase, leading to deposition of tin-rich metal oxide films on the substrate.