| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mehrtens, Thorsten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2016Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
- 2016Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structurescitations
- 2015Homogeneity and composition of AlInGaN: A multiprobe nanostructure studycitations
- 2014Quantitative Strain and Compositional Studies of In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniquescitations
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article
Quantitative Strain and Compositional Studies of In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques
Abstract
<jats:title>Abstract</jats:title><jats:p>In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (<jats:italic>x</jats:italic>) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.</jats:p>