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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Maguire, Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2023A Single‐Step Process to Produce Carbon Nanotube‐Zinc Compound Hybrid Materialscitations
- 2021Carrier extraction from metallic perovskite oxide nanoparticlescitations
- 2021Understanding plasma–ethanol non-equilibrium electrochemistry during the synthesis of metal oxide quantum dotscitations
- 2020The analysis of dissolved inorganic carbon in liquid using a microfluidic conductivity sensor with membrane separation of CO2citations
- 2019Nanostructured perovskite solar cells
- 2018Zero-dimensional methylammonium iodo bismuthate solar cells and synergistic interactions with silicon nanocrystalscitations
- 2018Microplasma-assisted electrochemical synthesis of Co3O4 nanoparticles in absolute ethanol for energy applicationscitations
- 2017Zero-dimensional methylammonium iodo bismuthate solar cells and synergistic interactions with silicon nanocrystalscitations
- 2017Charge carrier localised in zero-dimensional (CH 3 NH 3 ) 3 Bi 2 1 9 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusterscitations
- 2011Structural and surface energy analysis of nitrogenated ta-C filmscitations
- 2009Electrical and Raman spectroscopic studies of vertically aligned multi-walled carbon nanotubes.citations
- 2009Substrate effects on the microstructure of hydrogenated amorphous carbon filmscitations
- 2007Intrinsic mechanical properties of ultra-thin amorphous carbon layerscitations
- 2006Measuring the thickness of ultra-thin diamond-like carbon filmscitations
- 2004Platelet adhesion on silicon modified hydrogenated amorphous carbon films.citations
- 2001Electrical characteristics of nitrogen incorporated hydrogenated amorphous carboncitations
- 2001Intrinsic stress measured on ultra-thin amorphous carbon films deposited on AFM cantileverscitations
- 2001The insulating properties of a-C:H on silicon and metal substratescitations
- 2000Nitrogen doping of amorphous DLC films by rf plasma dissociated nitrogen atom surface bombardment in a vacuumcitations
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article
The insulating properties of a-C:H on silicon and metal substrates
Abstract
Amorphous carbon has many important applications. In electronic terms, its use as a dielectric is receiving greater attention. This is particularly important for applications in magnetic head devices as a reader gap insulation layer. Results are presented for resistivity and breakdown fields for hydrogenated amorphous carbon on silicon, undopedand doped with nitrogen, using an atomic flux sourer. Current-voltage characteristics were analysed using a numerical algorithm to determine trap densities. The results indicated that such films can meet the breakdown specifications, on silicon, and that nitrogen doping improves their characteristics. Thickness trends indicate improvements are likely as gaps are scaled. The density of states determination indicated that high breakdown was correlated, in the undoped case, with high DOS but this was not so for the doped films. The DOS was found to increase as the thickness decreased. On substrates other than silicon,the films were observed to have increased roughness, poorer adhesion and a more polymer-like quality. These changes were reflected in a reduction in the observed breakdown field. (C) 2001 Elsevier Science B.V, All rights reserved.