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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Li, Ning
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Matching the photocurrent of 2‐terminal mechanically‐stacked perovskite/organic tandem solar modules by varying the cell widthcitations
- 2022Comparison of the sputtered TiO2 anatase and rutile thin films as electron transporting layers in perovskite solar cellscitations
- 2022Ligand Tuning of Localized Surface Plasmon Resonances in Antimony-Doped Tin Oxide Nanocrystalscitations
- 2021Comparison of the sputtered TiO2 anatase and rutile thin films as electron transporting layers in perovskite solar cellscitations
- 2021Interface Molecular engineering for laminated monolithic perovskite/silicon tandem solar cells with 80.4% fill factorcitations
- 2021Dislocation-toughened ceramicscitations
- 2021Understanding the Microstructure Formation of Polymer Films by Spontaneous Solution Spreading Coating with a High‐Throughput Engineering Platformcitations
- 2020Derivation and Application of a Tool to Estimate Benefits From Multiple Therapies That Reduce Recurrent Stroke Riskcitations
- 2019Favorable Mixing Thermodynamics in Ternary Polymer Blends for Realizing High Efficiency Plastic Solar Cellscitations
- 2014Towards large-scale production of solution-processed organic tandem modules based on ternary composites: Design of the intermediate layer, device optimization and laser based module processingcitations
- 2013ITO-free and fully solution-processed semitransparent organic solar cells with high fill factorscitations
- 2013Overcoming interface losses in organic solar cells by applying low temperature, solution processed aluminum-doped zinc oxide electron extraction layerscitations
- 2013An efficient solution-processed intermediate layer for facilitating fabrication of organic multi-junction solar cellscitations
- 2009Open circuit voltage enhancement due to reduced dark current in small molecule photovoltaic cellscitations
- 2006Metrology in a scanning electron microscope: theoretical developments and experimental validationcitations
- 2002Enhancement of aluminum oxide physical vapor deposition with a secondary plasmacitations
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article
Enhancement of aluminum oxide physical vapor deposition with a secondary plasma
Abstract
<p>Reactive sputtering of aluminum oxide in a planar magnetron system is conducted with a mixture of O<sub>2</sub> and Ar reacting with and bombarding an aluminum target. The aluminum target is powered by a pulsed directed current (DC) bias which functions to discharge the accumulated ions on the insulating AlO<sub>x</sub> film surface during the positive duty cycle and suppresses arc formation. A seven-turn helical antenna sits below the magnetron sputtering system in the vacuum system and delivers radio-frequency (RF) power to generate a secondary plasma in the chamber. This plasma can efficiently ionize the sputtered flux, achieving ionized physical vapor deposition (IPVD). A gridded energy analyzer (GEA) and a quartz crystal microbalance (QCM) are located in the substrate plane to allow the ion and neutral deposition rates to be determined. Electron temperature and electron density are measured by a RF compensated Langmuir probe. A RF power of 500 W significantly increases the deposition rate of AlO<sub>x</sub> up to half of the Al deposition rate in metallic mode at the total pressure of 1.33 Pa (10 mtorr). At 3.33 Pa (25 mtorr), the ionization fraction of Al atoms reaches 90%. In addition the RF power extends the range of O<sub>2</sub> partial pressure in which the sputtering occurs in the metallic mode. SEM photos show that the secondary RF plasma makes the films smoother and denser due to a moderate level of ion bombardment. The deposition rates and ionization fractions fluctuate as a function of O<sub>2</sub> partial pressure. These variations can be explained by the combined variation of sputtering at the target, electron temperature and electron density.</p>