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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krier, Tony
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2019Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Siliconcitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2016Low leakage-current InAsSb nanowire photodetectors on siliconcitations
- 2015In(AsN) mid-infrared emission enhanced by rapid thermal annealingcitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2014The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxycitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2011Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodescitations
- 2011Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloyscitations
- 2009Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.citations
- 2007Strain enhancement during annealing of GaAsN alloys.citations
- 2000Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .citations
Places of action
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article
Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .
Abstract
Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.